A Thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in Agricultural Systems and Engineering, School of Environment, Resources and Development

Thesis (M.Sc.) - Asian Institute of Technology, 2017

Plant growth and development could be restricted by many factors. The main restricting is water deficiency. Application of different doses of silicon (Si) have been remarked helpful for enhancing plant forbearance against biotic and abiotic stresses. The experiments were conducted in plastic pot, from November 2016 to March 2017 in a polyhouse at the Asian Institute of Technology. The effect of Si on growth and yield improvement of maize under water stress was evaluated. The experiments were designed in a completely randomized design (CRD) with three replication, six Si rates, and three soil moisture levels. The growth parameters and yield components were extremely decreased by water stress. Si application doses significantly were improved plant height, dry matter and yield. In experiment 1 (soil mixing method) the highest yield was observed at 300 kg Si ha-1 , but in experiment 2 (seed priming method) the highest yield was recorded at 1 mM Si l -1 . Similarly, plant height, dry matter, leaf area, and number of leaves were improved with Si application. Water shortage considerably reduced the above plant parameters, while at well-watered condition plants growth and yield were increased. It can be concluded that application of Si can improve growth and yield of maize under water stress condition.