Characterisation of discrete electronics devices using thin layer fabrication with nano particles (Record no. 16318)

MARC details
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fixed length control field 04369nas a2200469 a 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20260817172505.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 110310s2009 th uu|m rtt 0| a1eng d
035 ## - SYSTEM CONTROL NUMBER
System control number .b12091741
099 #9 - LOCAL FREE-TEXT CALL NUMBER (OCLC)
Classification number AIT Thesis no.ME-09-02
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Khan, Zaheer Abbas
245 10 - TITLE STATEMENT
Title Characterisation of discrete electronics devices using thin layer fabrication with nano particles
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. Pathum Thani, Thailand :
Name of publisher, distributor, etc. Asian Institute of Technology,
Date of publication, distribution, etc. 2009
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource (40 p.) :
Other physical details illl.
490 1# - SERIES STATEMENT
Series statement Thesis ;
Volume/sequential designation no. ME-09-02
500 ## - GENERAL NOTE
General note A research study submitted in partial fulfillment of the requirements for the degree of Master of Engineering in Microelectronics, School of Engineering and Technology
502 ## - DISSERTATION NOTE
Dissertation note Thesis (M.Eng.) - Asian Institute of Technology, 2009
520 ## - SUMMARY, ETC.
Summary, etc. Nanometer-sized particles (gold and zinc sulphide) are considered to be the mostimportant fundamental building blocks for the future discrete electronic devices. Colloidalnano particles ( 20 nm) are differentiated from much smaller particles (molecules) because{u223C}their intrinsic properties still usually resembles with a bulk-like behavior. Nano crystallinethin films have been the subject of huge scientific and technological efforts over the pasttwo decades due to their interesting physicochemical, mechanical and electrical properties.The fabrication of alternate metal and insulator multilayer present numerous feasibleapplications in electronic devices (diodes, transistors, electronic memories, etc).However,there are numerous challenges and questions regarding the stability of the nano particles incolloids, thickness and quality of the thin films, that must be addressed before nanoparticletechnologies can be implemented successfully.Attempts were made to understand andcontrol nanoparticle aggregation processes that have been brought about using concepts ofmolecular recognition.New methods for assembling nanoparticles together into multilayerdevices with more complex electronic functions are also required.This study highlights our recent progress toward characterizing thin layerfabrication using electrostatically stabilized gold nanoparticles as a function of cappingcharge state while zinc sulphide was electrosterically stablised by chitoson (a bio polymer).The idea of introducing the buffer solutions (acetate and citrate) between the alternatedepositing of metal (Gold) and insulator (ZnS) bi-layers helped to remove the aggregationof these nanoparticles. The experiments that performed, have concluded that by controllingthe concentration and pH of the colloidal solutions, a remarkable improvement is observedin the electrical and optical properties of deposited layers.The possibility of fabricating thin films has opened new horizons to find practicalapplications of these devices in future microelectronic circuits.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Nanoelectromechanical systems
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Nanoelectronics
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Nanoparticles
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Dutta, Joydeep,
Relator term Chairperson
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Bohez, Erik L.J.,
Relator term Examination Committee
700 0# - ADDED ENTRY--PERSONAL NAME
Personal name Chanchana Thanachayanont,
Relator term Examination Committee
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element Higher Education Commission (HEC), Pakistan,
Relator term Scholarship Donor
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element Asian Institute of Technology Fellowship,
Relator term Scholarship Donor
810 2# - SERIES ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element Asian Institute of Technology.
Title of a work Thesis ;
Volume/sequential designation no. ME-09-02
856 ## - ELECTRONIC LOCATION AND ACCESS
Materials specified Full-Text
Uniform Resource Identifier <a href="http://203.159.5.9/ait-thesis/detail.php?q=B03439 ">http://203.159.5.9/ait-thesis/detail.php?q=B03439 </a>
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998 ## - LOCAL CONTROL INFORMATION (RLIN)
Operator's initials, OID (RLIN) 0
Cataloger's initials, CIN (RLIN) 110310
First date, FD (RLIN) m
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Koha item type 22-AIT Thesis (Replacement)
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Koha item type 40-Archives
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Koha item type 20-AIT Publication
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Holdings
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      Available for Loans Asian Institute of Technology Library Asian Institute of Technology Library AIT Publications 17/08/2026 50.00   AIT Thesis no.ME-09-02 30050160057757 17/08/2026 3 17/08/2026 22-AIT Thesis (Replacement)
      Available for Loans Asian Institute of Technology Library Asian Institute of Technology Library Archives 17/08/2026     AIT Thesis no.ME-09-02 30050160028048 17/08/2026 1 17/08/2026 40-Archives
      Available for Loans Asian Institute of Technology Library Asian Institute of Technology Library AIT Publications 17/08/2026     AIT Thesis no.ME-09-02 30050121004153 17/08/2026 1 17/08/2026 20-AIT Publication
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